九州体育手机版在线平台

    <mark id="vg88i"></mark>
    <tt id="vg88i"></tt>

  • <mark id="vg88i"></mark>
    <tt id="vg88i"></tt>

    <listing id="vg88i"><cite id="vg88i"></cite></listing>

    <listing id="vg88i"></listing>

  • <mark id="vg88i"><ol id="vg88i"><span id="vg88i"></span></ol></mark>
    1. <small id="vg88i"></small>

    2. Research

      Position : Home > Research > Laboratories

      Wide Band Gap Semiconductor Technology State Key Laboratory

      Time: Sep 2, 2014

      Wide Band Gap Semiconductor Technology State Key Laboratory is the key laboratory reorganizing the Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, the Ministry of Education, in 2007. It mainly conducts applied basic research on wide band gap semiconductor materials and devices. It is Xidian University’s base for training national IC talents,and an important support for the national key disciplines of “microelectronics”and “solid electronics”.

      The Laboratory started the scientific research on wide band gap semiconductors andrelated   talents cultivation in the 1990s. At present, it has become an important base for scientific research, talents cultivation, academic exchange and technical transfer in the field both home and abroad. In 2008, it became the national defense sci-tech innovation team of China.  

      The Laboratory possesses equipments for manufacturing wide band gap materials,materials manufacturing technology, manufacturing technology for microwave power devices and tube cores of high brightness LED devices, and quite a few own key techniques for microwave power modules, micro-nanometer device reliability and VLSI circuit design which have marked features.

      The Laboratory pays attention to the application of their research, with many achievements applied in the national projects and national defense projects. Its high-quality GaN and SiC material epitaxial wafers can be batch manufactured for large-scale usage in enterprises and research institutes. Its microwave power devices have been used in national key projects. The GaN LED has become the core technology of semiconductor lighting in Shaanxi Province,which plays a radiating and promoting role. Its own MOCVD device and relatedcore technology are in the process of industrialization. Its micro-nanometerdevice reliability technology has played an important role in promoting the development of ICs with high reliability in China.  

      Add5F(West Side), Sci-tech Building, North Campus; West Classroom Building, North Campus

      Tel86-029-88202073

      Fax: 86-29-88202073-619

      Emailpjma@xidian.edu.cn

      Homepage:http://ekdx.xidian.edu.cn/index.htm

      Close

      <mark id="vg88i"></mark>
      <tt id="vg88i"></tt>

    3. <mark id="vg88i"></mark>
      <tt id="vg88i"></tt>

      <listing id="vg88i"><cite id="vg88i"></cite></listing>

      <listing id="vg88i"></listing>

    4. <mark id="vg88i"><ol id="vg88i"><span id="vg88i"></span></ol></mark>
      1. <small id="vg88i"></small>

      2. 九州体育吧

        泊利彩票官网

        谁有万福彩票官网

        a23彩票平台

        利盈的彩大厅

        凤凰福彩app下载

        探比分球

        中国福彩官方app安卓版

        白菜 网